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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D369
BGY122A; BGY122B UHF amplifier modules
Product specification Supersedes data of 1997 Dec 01 1998 May 11
Philips Semiconductors
Product specification
UHF amplifier modules
FEATURES * Single 4.8 V nominal supply voltage * 1.2 W output power * Easy control of output power by DC voltage * Very high efficiency (typ. 55%) * Silicon bipolar technology * Standby current less than 100 A. APPLICATIONS * Hand-held transmitting equipment operating in the 824 to 849 MHz and 872 to 905 MHz frequency ranges. DESCRIPTION The BGY122A and BGY122B are three-stage UHF amplifier modules in a SOT388B package. Each module consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate. The modules produce an output power of 1.2 W into a load of 50 with an RF drive power of 2 mW. QUICK REFERENCE DATA RF performance at Tmb = 25 C. TYPE BGY122A BGY122B MODE OF OPERATION CW CW f (MHz) 824 to 849 872 to 905 VS (V) 4.8 4.8 PL (W) 1.2 1.2
handbook, halfpage
BGY122A; BGY122B
PINNING - SOT388B PIN 1 2 3 4 Flange RF input VC VS RF output ground DESCRIPTION
1 Top view
2
3
4
MBK197
Fig.1 Simplified outline.
Gp (dB) 27.8 27.8
(%) typ. 55 typ. 55
ZS; ZL () 50 50
1998 May 11
2
Philips Semiconductors
Product specification
UHF amplifier modules
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS VC PD PL Tstg Tmb PARAMETER DC supply voltage DC control voltage input drive power load power storage temperature operating mounting base temperature CONDITIONS VC = 0; PD = 0
BGY122A; BGY122B
MIN. - - - - -40 -30
MAX. 10 3.5 5 1.6 +100 +100
UNIT V V mW W C C
handbook, halfpage
2.0 PL (W) 1.6
MDA147
VSWR = 1:1 VSWR = 3:1
1.2
0.8
0.4
0 0 40 80 120 T mb (oC)
VS = 6.5 V.
Fig.2 Load power derating curve.
1998 May 11
3
Philips Semiconductors
Product specification
UHF amplifier modules
BGY122A; BGY122B
CHARACTERISTICS ZS = ZL = 50 ; PD = 2 mW; VS = 4.8 V; VC 3 V; Tmb = 25 C; unless otherwise specified. SYMBOL f PARAMETER frequency BGY122A BGY122B IQ IC PL Gp H2 H3 VSWRin total quiescent current control current load power power gain efficiency second harmonic third harmonic input VSWR stability VC = 0; PD < -60 dBm adjust VC for PL = 1.2 W VC = 3 V adjust VC for PL = 1.2 W adjust VC for PL = 1.2 W adjust VC for PL = 1.2 W adjust VC for PL = 1.2 W adjust VC for PL = 1.2 W PD = 0 to +6 dBm; VS = 4 to 6.5 V; VC = 0 to 3 V; PL 1.2 W; VSWR 6 : 1 through all phases VC = 0 adjust VC for PL = 1.2 W; bandwidth = 30 kHz; fn = fo + 45 MHz VS = 6.5 V; adjust VC for PL = 1.4 W; VSWR 10 : 1 through all phases 824 872 - - 1.2 27.8 50 - - - - - - - - - - 55 - - - - 849 905 100 500 - - - -36 -36 3:1 -60 dBc MHz MHz A A W dB % dBc dBc CONDITIONS MIN. TYP. MAX. UNIT
isolation Pn noise power ruggedness
- -
-40 -
- -90
dBm dBm
no degradation
1998 May 11
4
Philips Semiconductors
Product specification
UHF amplifier modules
BGY122A; BGY122B
MDA148
MDA149
handbook, halfpage
2.0 PL (W) 1.6
handbook, halfpage
80
(%) 824 MHz 849 MHz 60 849 MHz
1.2 40 0.8 20 0.4
824 MHz
0 0 1 2 3 VC (V) 4
0 0 0.4 0.8 1.2 1.6 2.0 PL (W)
ZS = ZL = 50 ; PD = 2 mW; VS = 4.8 V; Tmb = 25 C.
ZS = ZL = 50 ; PD = 2 mW; VS = 4.8 V; Tmb = 25 C.
Fig.3
Load power as a function of control voltage; BGY122A; typical values.
Fig.4
Efficiency as a function of load power; BGY122A; typical values.
MDA150
handbook, halfpage
2.0 PL (W)
handbook, halfpage
2.0 PL (W) 1.6
MDA151
1.6 VS = 4.8 V 1.2 4V 0.8
849 MHz 824 MHz
1.2
0.8
0.4
0.4
0 820
830
840
850
f (MHz)
860
0 -40
0
40
80
120 Tmb (oC)
ZS = ZL = 50 ; PD = 2 mW; VC = 3 V; Tmb = 25 C.
ZS = ZL = 50 ; PD = 2 mW; VS = 4.8 V; VC = 3 V.
Fig.5
Load power as a function of frequency; BGY122A; typical values.
Fig.6
Load power as a function of mounting base temperature; BGY122A; typical values.
1998 May 11
5
Philips Semiconductors
Product specification
UHF amplifier modules
BGY122A; BGY122B
handbook, halfpage
4
MDA152
3.0 VSWRin 2.5
handbook, halfpage
40
MDA153
VC (V) 3
PL (dBm) 20
VC 2 2.0 0
849 MHz 824 MHz
VSWRin 1 1.5 -20
0 820
830
840
850 f (MHz)
1.0 860
-40 -40
-30
-20
-10
0 10 PD (dBm)
ZS = ZL = 50 ; PD = 2 mW; VS = 4.8 V; PL = 1.2 W; Tmb = 25 C.
ZS = ZL = 50 ; VS = 4.8 V; VC = 3 V; Tmb = 25 C.
Fig.7
Control voltage and input VSWR as functions of frequency; BGY122A; typical values.
Fig.8
Load power as a function of drive power; BGY122A; typical values.
-30 H2, H3 (dBc) -40
MDA154
MDA155
handbook, halfpage
2.0 PL (W) 1.6
H3 H2
1.2
872 MHz 905 MHz
-50
0.8
0.4
-60 820
830
840
850
f (MHz)
860
0 0 1 2 3 VC (V) 4
ZS = ZL = 50 ; PD = 2 mW; VS = 4.8 V; PL = 1.2 W; Tmb = 25 C.
ZS = ZL = 50 ; PD = 2 mW; VS = 4.8 V; Tmb = 25 C.
Fig.9
Harmonics as a function of frequency; BGY122A; typical values.
Fig.10 Load power as a function of control voltage; BGY122B; typical values.
1998 May 11
6
Philips Semiconductors
Product specification
UHF amplifier modules
BGY122A; BGY122B
MDA156
MDA157
handbook, halfpage
80
handbook, halfpage
(%) 60
2.0 PL (W)
1.6 872 MHz 905 MHz 40 0.8 1.2
VS = 4.8 V
4V
20 0.4
0 0 0.4 0.8 1.2 1.6 2.0 PL (W)
0 840
860
880
900
f (MHz)
920
ZS = ZL = 50 ; PD =2 mW; VS = 4.8 V; Tmb = 25 C.
ZS = ZL = 50 ; PD = 2 mW; VC = 3 V; Tmb = 25 C.
Fig.11 Efficiency as a function of load power; BGY122B; typical values.
Fig.12 Load power as a function of frequency; BGY122B; typical values.
MDA158
handbook, halfpage
2.0 PL (W) 1.6
handbook, halfpage
40
MDA160
PL (dBm) 872 MHz 905 MHz 905 MHz 0 872 MHz 20
1.2
0.8 -20 0.4
0 -40
0
40
80
120 Tmb (oC)
-40 -40
-30
-20
-10
0 10 PD (dBm)
ZS = ZL = 50 ; PD = 2 mW; VS = 4.8 V; VC = 3 V.
ZS = ZL = 50 ; VS = 4.8 V; VC = 3 V; Tmb = 25 C.
Fig.13 Load power as a function of mounting base temperature; BGY122B; typical values.
Fig.14 Load power as a function of drive power; BGY122B; typical values.
1998 May 11
7
Philips Semiconductors
Product specification
UHF amplifier modules
BGY122A; BGY122B
4
handbook, halfpage
MDA159
3.0 VSWRin 2.5
-30 H2, H3 (dBc) -40 H3
MDA161
VC (V) 3 VC 2 VSWRin
2.0 H2 -50
1
1.5
0 840
860
880
900 f (MHz)
1.0 920
-60 840
860
880
900
f (MHz)
920
ZS = ZL = 50 ; PD = 2 mW; VS = 4.8 V; PL = 1.2 W; Tmb = 25 C.
ZS = ZL = 50 ; PD = 2 mW; VS = 4.8 V; PL = 1.2 W; Tmb = 25 C.
Fig.15 Control voltage and input VSWR as functions of frequency; BGY122B; typical values.
Fig.16 Harmonics as a function of frequency; BGY122B; typical values.
handbook, full pagewidth
pin numbers
1
2
3
4
L1 Z1 C2 C3 C1
L2 C4 C6 C5 Z2
RF input
VC
MSA914
VS
RF output
Fig.17 Test circuit.
1998 May 11
8
Philips Semiconductors
Product specification
UHF amplifier modules
BGY122A; BGY122B
handbook, full pagewidth
1
90 2 34
50 input
50 output 47
VC
VS
MBH435
Dimensions in mm.
Fig.18 Printed-circuit board test-fixture.
List of components (See Figs 17 and 18) COMPONENT C1, C4 C2, C5 C3, C6 L1, L2 Z1, Z2 Note 1. The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (r = 2.2); thickness 1 inch. 32 DESCRIPTION multilayer ceramic chip capacitor tantalum capacitor multilayer ceramic chip capacitor Grade 4S2 Ferroxcube chip bead stripline; note 1 VALUE 100 nF 2.2 F; 35 V 33 pF - 50 - 2222 851 13339 4330 030 36300 - CATALOGUE NO. 2222 852 47104
1998 May 11
9
Philips Semiconductors
Product specification
UHF amplifier modules
SOLDERING The indicated temperatures are those at the solder interfaces. Advised solder types are types with a liquidus less than or equal to 210 C. Solder dots or solder prints must be large enough to wet the contact areas. Soldering can be carried out using a conveyor oven, a hot air oven, an infrared oven or a combination of these ovens. A double reflow process is permitted. Hand soldering must be avoided because the soldering iron tip can exceed the maximum permitted temperature of 250 C and damage the module. The maximum allowed temperature is 250 C for a maximum of 5 seconds. The maximum ramp-up is 10 C per second. The maximum cool-down is 5 C per second. Cleaning The following fluids may be used for cleaning: * Alcohol * Bio-Act (Terpene Hydrocarbon) * Acetone. Ultrasonic cleaning should not be used since this can cause serious damage to the product.
0 0 1 300
BGY122A; BGY122B
MGM159
handbook, halfpage
T (C) 200
100
2
3
4
t (min)
5
Fig.19 Recommended reflow temperature profile.
1998 May 11
10
Philips Semiconductors
Product specification
UHF amplifier modules
BGY122A; BGY122B
handbook, full pagewidth
17.7 12.5 12 6
4 8.75 footprint metallization solder area occupied area 2.9 1.8 1 0.57 0.7 1.37 5.08 5.08 17.9 1.7 2.54 6.75
12.5
17.1 12.4 12.1 6.4
solder area 5.55 2.45
7.55
1.67 2.7 1.1 0.5 1.37 5.08 5.08 1.5 2.54
MGM150
Dimensions in mm.
Fig.20 Footprint SOT388B.
1998 May 11
11
Philips Semiconductors
Product specification
UHF amplifier modules
PACKAGE OUTLINE Rectangular single-ended surface-mount package; metal cap; 4 in-line leads
BGY122A; BGY122B
SOT388B
U
A
y
E
U1
1 L
2
3
4
Q
b Z e e e1
wM
c
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 2.2 1.8 b 0.56 0.46 c 0.30 0.20 e 5.08 e1 2.54 E 12.2 11.8 L 0.7 0.3 Q 3.4 3.0 U 17.3 16.9 U1 6.0 5.6 w 0.25 y 0.15 Z 2.3 1.9
OUTLINE VERSION SOT388B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-11-19
1998 May 11
12
Philips Semiconductors
Product specification
UHF amplifier modules
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BGY122A; BGY122B
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 May 11
13
Philips Semiconductors
Product specification
UHF amplifier modules
NOTES
BGY122A; BGY122B
1998 May 11
14
Philips Semiconductors
Product specification
UHF amplifier modules
NOTES
BGY122A; BGY122B
1998 May 11
15
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125108/00/04/pp16
Date of release: 1998 May 11
Document order number:
9397 750 03828

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